💠 Exploring the Physics of Silicon Nanoscale Devices

Project type: Computation and Theory

Quantum silicon devices integrating a few quantum dots in atomically precise configurations are promising platforms for universal quantum computing and analog quantum simulations. Geometric confinement, contact's properties, and externally applied fields modify the dopants' quantum state compared to the unperturbed bulk condition.

In this project, the student will numerically investigate the electronic structure and the nonlinear transport properties of dot arrays in model devices under several gates and source/drain potentials, and develop methods to calculate model Hamiltonian parameters to validate quantum simulations in these devices.

Possible topics available for a participant include: (i) Characterizations of 2D silicon nanowires as a function of impurity density and impurity distribution; (ii) Quantum-dot-state control with electronic gates; (iii) Optoelectronic response of silicon quantum dots; and (iv) Noise and stochastic properties of the stationary electronic current.

Undergraduates working on this project will get hands-on experience in electronic structure calculations, nanoscale electron transport, and numerical simulations, physics of nanoscale transistors, open quantum system dynamics modeling, Schrodinger-Poisson solvers, quantum master equations, and the split-operator method.

Alumni/Previous Projects

Want help getting in touch with this mentor? Reach out to Daniel.

Reach out with questions, application materials, or to set up a time to chat.

• trend-reu@umd.edu
• Daniel Serrano (Program Director)
• Schedule chat